Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ)
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MAX15025EATB+T
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RFQ
1,114
In-stock
Maxim Integrated IC GATE DRVR 2CH 16NS 10TDFN - Obsolete Tape & Reel (TR) Inverting, Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) 4.5 V ~ 28 V Independent Low-Side 2 N-Channel MOSFET - 2A, 4A - 48ns, 32ns
MAX15025DATB+T
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RFQ
1,182
In-stock
Maxim Integrated IC GATE DRVR 2CH 16NS 10TDFN Automotive, AEC-Q100 Obsolete Tape & Reel (TR) Inverting, Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) 6.5 V ~ 28 V Independent Low-Side 2 N-Channel MOSFET 2V, 4.25V 2A, 4A - 48ns, 32ns
MAX15025FATB+T
RFQ
VIEW
RFQ
1,760
In-stock
Maxim Integrated IC GATE DRVR 2CH 16NS 10TDFN - Obsolete Tape & Reel (TR) Inverting, Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) 6.5 V ~ 28 V Independent Low-Side 2 N-Channel MOSFET - 2A, 4A - 48ns, 32ns
MAX15025HATB+T
RFQ
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RFQ
2,929
In-stock
Maxim Integrated IC GATE DRVR 2CH 16NS 10TDFN - Obsolete Tape & Reel (TR) Inverting, Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) 6.5 V ~ 28 V Independent Low-Side 2 N-Channel MOSFET - 2A, 4A - 48ns, 32ns
MAX15025GATB+T
RFQ
VIEW
RFQ
1,153
In-stock
Maxim Integrated IC GATE DRVR 2CH 16NS 10TDFN - Obsolete Tape & Reel (TR) Inverting, Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) 4.5 V ~ 28 V Independent Low-Side 2 N-Channel MOSFET - 2A, 4A - 48ns, 32ns
MAX15025BATB+T
RFQ
VIEW
RFQ
1,993
In-stock
Maxim Integrated IC GATE DRVR 2CH 16NS 10TDFN Automotive, AEC-Q100 Active Tape & Reel (TR) Inverting, Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) 6.5 V ~ 28 V Independent Low-Side 2 N-Channel MOSFET 2V, 4.25V 2A, 4A - 48ns, 32ns