Applied Filters :
17 results
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Memory Type Memory Size Clock Frequency Memory Format Write Cycle Time - Word, Page Memory Interface
GLOBAL STOCKS
TH58BVG3S0HTA00
RFQ
VIEW
RFQ
2,472
In-stock
Toshiba Memory America, Inc. IC EEPROM 4GBIT 25NS 48TSOP Benand™ Active Tray FLASH - NAND (SLC) 0°C ~ 70°C (TA) Surface Mount 48-TFSOP (0.724", 18.40mm Width) 48-TSOP I 2.7 V ~ 3.6 V Non-Volatile 8Gb (1G x 8) - Flash 25ns Parallel
TC58BVG2S0HTA00
RFQ
VIEW
RFQ
1,036
In-stock
Toshiba Memory America, Inc. IC EEPROM 4GBIT 25NS 48TSOP Benand™ Active Tray FLASH - NAND (SLC) 0°C ~ 70°C (TA) Surface Mount 48-TFSOP (0.724", 18.40mm Width) 48-TSOP I 2.7 V ~ 3.6 V Non-Volatile 4Gb (512M x 8) - Flash 25ns Parallel
TC58BVG2S0HBAI4
RFQ
VIEW
RFQ
1,394
In-stock
Toshiba Memory America, Inc. IC EEPROM 4GBIT 25NS 63FBGA Benand™ Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 63-VFBGA 63-TFBGA (9x11) 2.7 V ~ 3.6 V Non-Volatile 4Gb (512M x 8) - Flash 25ns Parallel
TC58BVG1S3HTAI0
RFQ
VIEW
RFQ
1,929
In-stock
Toshiba Memory America, Inc. IC EEPROM 2GBIT 25NS 48TSOP Benand™ Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 48-TFSOP (0.724", 18.40mm Width) 48-TSOP I 2.7 V ~ 3.6 V Non-Volatile 2Gb (256M x 8) - Flash 25ns Parallel
TC58BVG1S3HTA00
RFQ
VIEW
RFQ
2,773
In-stock
Toshiba Memory America, Inc. IC EEPROM 2GBIT 25NS 48TSOP Benand™ Active Tray FLASH - NAND (SLC) 0°C ~ 70°C (TA) Surface Mount 48-TFSOP (0.724", 18.40mm Width) 48-TSOP I 2.7 V ~ 3.6 V Non-Volatile 2Gb (256M x 8) - Flash 25ns Parallel
TC58BVG1S3HBAI6
RFQ
VIEW
RFQ
2,812
In-stock
Toshiba Memory America, Inc. IC EEPROM 2GBIT 25NS 67VFBGA Benand™ Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 67-VFBGA 67-VFBGA (6.5x8) 2.7 V ~ 3.6 V Non-Volatile 2Gb (256M x 8) - Flash 25ns Parallel
TC58BVG0S3HTAI0
RFQ
VIEW
RFQ
3,116
In-stock
Toshiba Memory America, Inc. IC EEPROM 1GBIT 25NS 48TSOP Benand™ Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 48-TFSOP (0.724", 18.40mm Width) 48-TSOP I 2.7 V ~ 3.6 V Non-Volatile 1Gb (128M x 8) - Flash 25ns Parallel
TC58BVG0S3HTA00
RFQ
VIEW
RFQ
974
In-stock
Toshiba Memory America, Inc. IC EEPROM 1GBIT 25NS 48TSOP Benand™ Active Tray FLASH - NAND (SLC) 0°C ~ 70°C (TA) Surface Mount 48-TFSOP (0.724", 18.40mm Width) 48-TSOP I 2.7 V ~ 3.6 V Non-Volatile 1Gb (128M x 8) - Flash 25ns Parallel
TC58BVG0S3HBAI6
RFQ
VIEW
RFQ
1,057
In-stock
Toshiba Memory America, Inc. IC EEPROM 1GBIT 25NS 67VFBGA Benand™ Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 67-VFBGA 67-VFBGA (6.5x8) 2.7 V ~ 3.6 V Non-Volatile 1Gb (128M x 8) - Flash 25ns Parallel
TC58BYG1S3HBAI6
RFQ
VIEW
RFQ
2,861
In-stock
Toshiba Memory America, Inc. IC EEPROM 2GBIT 25NS 67VFBGA Benand™ Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 67-VFBGA 67-VFBGA (6.5x8) 1.7 V ~ 1.95 V Non-Volatile 2Gb (256M x 8) - Flash 25ns Parallel
TH58BVG2S3HTAI0
RFQ
VIEW
RFQ
1,209
In-stock
Toshiba Memory America, Inc. IC EEPROM 4GBIT 25NS 48TSOP Benand™ Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 48-TFSOP (0.724", 18.40mm Width) 48-TSOP I 2.7 V ~ 3.6 V Non-Volatile 4Gb (512M x 8) - Flash 25ns Parallel
TH58BYG2S3HBAI6
RFQ
VIEW
RFQ
3,563
In-stock
Toshiba Memory America, Inc. IC EEPROM 4GBIT 25NS 67FBGA Benand™ Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 67-VFBGA 67-VFBGA (6.5x8) 1.7 V ~ 1.95 V Non-Volatile 4Gb (512M x 8) - Flash 25ns Parallel
TC58BYG0S3HBAI6
RFQ
VIEW
RFQ
2,808
In-stock
Toshiba Memory America, Inc. IC EEPROM 1GBIT 25NS 67VFBGA Benand™ Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 67-VFBGA 67-VFBGA (6.5x8) 1.7 V ~ 1.95 V Non-Volatile 1Gb (128M x 8) - Flash 25ns Parallel
TC58BVG0S3HBAI4
RFQ
VIEW
RFQ
2,535
In-stock
Toshiba Memory America, Inc. IC EEPROM 1GBIT 25NS 63FBGA Benand™ Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 63-VFBGA 63-TFBGA (9x11) 2.7 V ~ 3.6 V Non-Volatile 1Gb (128M x 8) - Flash 25ns Parallel
TH58BVG2S3HTA00
RFQ
VIEW
RFQ
1,980
In-stock
Toshiba Memory America, Inc. IC EEPROM 4GBIT 25NS 48TSOP Benand™ Active Tray FLASH - NAND (SLC) 0°C ~ 70°C (TA) Surface Mount 48-TFSOP (0.724", 18.40mm Width) 48-TSOP I 2.7 V ~ 3.6 V Non-Volatile 4Gb (512M x 8) - Flash 25ns Parallel
TC58BVG2S0HTAI0
RFQ
VIEW
RFQ
1,084
In-stock
Toshiba Memory America, Inc. IC EEPROM 4GBIT 25NS 48TSOP Benand™ Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 48-TFSOP (0.724", 18.40mm Width) 48-TSOP I 2.7 V ~ 3.6 V Non-Volatile 4Gb (512M x 8) - Flash 25ns Parallel
TC58BYG2S0HBAI6
RFQ
VIEW
RFQ
3,312
In-stock
Toshiba Memory America, Inc. IC EEPROM 4GBIT 25NS 67VFBGA Benand™ Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 67-VFBGA 67-VFBGA (6.5x8) 1.7 V ~ 1.95 V Non-Volatile 4Gb (512M x 8) - Flash 25ns Parallel