Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Memory Type Memory Size Clock Frequency Memory Format Write Cycle Time - Word, Page Memory Interface
GLOBAL STOCKS
TC58NVG2S0HBAI4
RFQ
VIEW
RFQ
2,980
In-stock
Toshiba Memory America, Inc. IC EEPROM 4GBIT 25NS 63TFBGA - Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 63-VFBGA 63-TFBGA (9x11) 2.7 V ~ 3.6 V Non-Volatile 4Gb (512M x 8) - Flash 25ns Parallel
TC58BVG2S0HBAI4
RFQ
VIEW
RFQ
1,394
In-stock
Toshiba Memory America, Inc. IC EEPROM 4GBIT 25NS 63FBGA Benand™ Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 63-VFBGA 63-TFBGA (9x11) 2.7 V ~ 3.6 V Non-Volatile 4Gb (512M x 8) - Flash 25ns Parallel
TC58NVG0S3HBAI4
RFQ
VIEW
RFQ
3,349
In-stock
Toshiba Memory America, Inc. IC EEPROM 1GBIT 25NS 63TFBGA - Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 63-VFBGA 63-TFBGA (9x11) 2.7 V ~ 3.6 V Non-Volatile 1Gb (128M x 8) - Flash 25ns Parallel
TC58NVG1S3HBAI4
RFQ
VIEW
RFQ
2,855
In-stock
Toshiba Memory America, Inc. IC EEPROM 2GBIT 25NS 63FBGA - Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 63-VFBGA 63-TFBGA (9x11) 2.7 V ~ 3.6 V Non-Volatile 2Gb (256M x 8) - Flash 25ns Parallel
TC58BVG0S3HBAI4
RFQ
VIEW
RFQ
2,535
In-stock
Toshiba Memory America, Inc. IC EEPROM 1GBIT 25NS 63FBGA Benand™ Active Tray FLASH - NAND (SLC) -40°C ~ 85°C (TA) Surface Mount 63-VFBGA 63-TFBGA (9x11) 2.7 V ~ 3.6 V Non-Volatile 1Gb (128M x 8) - Flash 25ns Parallel