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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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VIEW |
1,966
In-stock
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Microsemi Corporation | IGBT 900V 63A 290W TO-247 | POWER MOS 8™ | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 290W | TO-247 [B] | 63A | 900V | PT | 3.1V @ 15V, 18A | 105A | 642µJ (on), 382µJ (off) | 84nC | 12ns/104ns | 600V, 18A, 10 Ohm, 15V | |||
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VIEW |
1,406
In-stock
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Microsemi Corporation | IGBT 900V 63A 290W TO247 | - | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 290W | TO-247 [B] | 63A | 900V | PT | 3.1V @ 15V, 18A | 105A | 642µJ (on), 382µJ (off) | 84nC | 12ns/104ns | 600V, 18A, 10 Ohm, 15V | |||
