Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXYS MOSFET N-CH Active - SiC (Silicon Carbide Junction Transistor) -40°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B N-Channel 1200V 47A (Tc) 50 mOhm @ 40A, 20V 2.2V @ 2mA 100nC @ 20V 1900pF @ 1000V 20V +20V, -5V
IXFN50N120SK
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2,567
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IXYS MOSFET N-CH Active - SiC (Silicon Carbide Junction Transistor) -40°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B N-Channel 1200V 48A (Tc) 52 mOhm @ 40A, 20V 2.8V @ 10mA 115nC @ 20V 1895pF @ 1000V 20V +20V, -5V