Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FCP22N60N-F102
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3,939
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ON Semiconductor MOSFET N-CH 600V 22A TO220-3 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 205W (Tc) N-Channel - 600V 22A (Tc) 165 mOhm @ 11A, 10V 4V @ 250µA 45nC @ 10V 1950pF @ 100V 10V ±45V
FCP22N60N
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673
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ON Semiconductor MOSFET N-CH 600V 22A TO-220 SupreMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 205W (Tc) N-Channel - 600V 22A (Tc) 165 mOhm @ 11A, 10V 4V @ 250µA 45nC @ 10V 1950pF @ 100V 10V ±45V
FCPF22N60NT
RFQ
VIEW
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3,523
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ON Semiconductor MOSFET N-CH 600V 22A TO-220F SupreMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 39W (Tc) N-Channel - 600V 22A (Tc) 165 mOhm @ 11A, 10V 4V @ 250µA 45nC @ 10V 1950pF @ 100V 10V ±45V