Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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C3M0065090J-TR
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RFQ
3,485
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Cree/Wolfspeed MOSFET N-CH 900V 35A D2PAK-7 C3M™ Active Tape & Reel (TR) SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 113W (Tc) N-Channel - 900V 35A (Tc) 78 mOhm @ 20A, 15V 2.1V @ 5mA 30nC @ 15V 660pF @ 600V 15V +19V, -8V
C3M0075120J
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RFQ
1,351
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 30A D2PAK-7 C3M™ Active Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 113.6W (Tc) N-Channel - 1200V 30A (Tc) 90 mOhm @ 20A, 15V 4V @ 5mA 51nC @ 15V 1350pF @ 1000V 15V +19V, -8V
C3M0075120K
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RFQ
2,586
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 30.8A TO247-4 C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 TO-247-4L 119W (Tc) N-Channel - 1200V 30.8A (Tc) 90 mOhm @ 20A, 15V 4V @ 5mA 51nC @ 15V 1350pF @ 1000V 15V +19V, -8V
C3M0065100K
RFQ
VIEW
RFQ
2,578
In-stock
Cree/Wolfspeed 1000V, 65 MOHM, G3 SIC MOSFET C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) - TO-247-4 TO-247-4L 113.5W (Tc) N-Channel - 1000V 35A (Tc) 78 mOhm @ 20A, 15V 3.5V @ 5mA 35nC @ 15V 660pF @ 600V 15V +19V, -8V
C3M0065090J
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VIEW
RFQ
3,614
In-stock
Cree/Wolfspeed MOSFET N-CH 900V 35A D2PAK-7 C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 113W (Tc) N-Channel - 900V 35A (Tc) 78 mOhm @ 20A, 15V 2.1V @ 5mA 30nC @ 15V 660pF @ 600V 15V +19V, -8V