- Series :
- Part Status :
- Packaging :
- Technology :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
-
- 125W (Tc) (1)
- 150W (Tc) (1)
- 165W (Tc) (2)
- 175W (Tc) (2)
- 176W (Tc) (1)
- 192W (Tc) (1)
- 220W (Tc) (1)
- 270W (Tc) (1)
- 273W (Tc) (4)
- 277W (Tc) (1)
- 300W (Tc) (2)
- 318W (Tc) (2)
- 330W (Tc) (1)
- 463W (Tc) (1)
- 520W (Tc) (2)
- 52W (Tc) (1)
- 555W (Tc) (1)
- 556W (Tc) (1)
- 600W (Tc) (1)
- 62.5W (Tc) (1)
- 625W (Tc) (1)
- 65W (Tc) (1)
- 69W (Tc) (1)
- 78W (Tc) (2)
- Drain to Source Voltage (Vdss) :
- Current - Continuous Drain (Id) @ 25°C :
-
- 10A (Tc) (1)
- 110A (Tc) (1)
- 12A (Tc) (1)
- 143A (Tc) (1)
- 19A (Tc) (1)
- 20A (Tc) (1)
- 25A (Tc) (1)
- 32A (Tc) (1)
- 35A (Tc) (1)
- 36A (Tc) (1)
- 4.6A (Tc) (1)
- 4.9A (Tc) (1)
- 40A (Tc) (2)
- 41A (Tc) (2)
- 49A (Tc) (1)
- 5.3A (Tc) (2)
- 51A (Tc) (1)
- 5A (Tc) (1)
- 60A (Tc) (1)
- 65A (Tc) (4)
- 71A (Tc) (1)
- 72A (Tc) (2)
- 78A (Tc) (1)
- 80A (Tc) (2)
- 90A (Tc) (1)
- Rds On (Max) @ Id, Vgs :
-
- 1.1 Ohm @ 2A, 20V (1)
- 1.2 Ohm @ 2A, 20V (1)
- 1.25 Ohm @ 2.5A, 20V (1)
- 1.4 Ohm @ 2A, 20V (2)
- 100 mOhm @ 20A, 20V (4)
- 125 mOhm @ 28A, 20V (1)
- 145 mOhm @ 10A, 20V (1)
- 17 mOhm @ 100A, 20V (1)
- 175 mOhm @ 10A, 20V (1)
- 196 mOhm @ 10A, 20V (1)
- 290 mOhm @ 10A, 20V (1)
- 34 mOhm @ 50A, 20V (2)
- 370 mOhm @ 6A, 20V (1)
- 45 mOhm @ 60A, 20V (2)
- 52 mOhm @ 40A, 20V (1)
- 55 mOhm @ 40A, 20V (3)
- 59 mOhm @ 50A, 20V (1)
- 69 mOhm @ 40A, 20V (2)
- 690 mOhm @ 6A, 20V (1)
- 70 mOhm @ 32.5A, 20V (3)
- 70 mOhm @ 50A, 20V (1)
- 98 mOhm @ 20A, 20V (1)
- Vgs(th) (Max) @ Id :
-
- 2.3V @ 1mA (Typ) (1)
- 2.3V @ 2mA (1)
- 2.4V @ 100µA (1)
- 2.4V @ 10mA (1)
- 2.4V @ 1mA (2)
- 2.5V @ 1mA (8)
- 2.5V @ 500µA (1)
- 2.6V @ 1mA (Typ) (1)
- 2.8V @ 1.25mA (Typ) (1)
- 2.8V @ 10mA (1)
- 3.1V @ 500µA (Typ) (2)
- 3.2V @ 500µA (2)
- 3.5V @ 1mA (1)
- 3.5V @ 250µA (1)
- 3V @ 1mA (2)
- 3V @ 1mA (Typ) (3)
- 4V @ 10mA (1)
- 4V @ 18mA (2)
- 4V @ 5mA (1)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 105nC @ 20V (1)
- 115nC @ 20V (1)
- 120nC @ 20V (1)
- 122nC @ 20V (2)
- 125nC @ 20V (3)
- 130nC @ 20V (3)
- 13nC @ 20V (3)
- 161nC @ 20V (1)
- 179nC @ 20V (1)
- 188nC @ 20V (2)
- 20.4nC @ 20V (1)
- 21nC @ 20V (1)
- 220nC @ 20V (1)
- 22nC @ 20V (1)
- 235nC @ 20V (3)
- 270nC @ 20V (1)
- 29nC @ 20V (1)
- 32.6nC @ 20V (1)
- 360nC @ 20V (1)
- 45nC @ 20V (1)
- 62nC @ 5V (1)
- 67nC @ 20V (1)
- 72nC @ 20V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 1035pF @ 700V (1)
- 1700pF @ 400V (1)
- 1893pF @ 1000V (1)
- 1900pF @ 400V (2)
- 191pF @ 1000V (1)
- 200pF @ 1000V (2)
- 2250pF @ 1000V (1)
- 249pF @ 1000V (1)
- 2560pF @ 1000V (3)
- 259pF @ 1000V (1)
- 2788pF @ 1000V (1)
- 290pF @ 400V (1)
- 2980pF @ 1000V (1)
- 325pF @ 1000V (1)
- 3672pF @ 1000V (1)
- 3672pF @ 1kV (1)
- 3950pF @ 700V (2)
- 527pF @ 800V (1)
- 5960pF @ 1000V (1)
- 650pF @ 400V (1)
- 950pF @ 1000V (1)
- Applied Filters :
33 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
2,502
In-stock
|
Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D3Pak | 625W (Tc) | N-Channel | - | 1200V | 80A (Tc) | 55 mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | - | 20V | +25V, -10V | ||||
VIEW |
2,748
In-stock
|
Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 273W (Tc) | N-Channel | - | 1200V | 51A (Tc) | 55 mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | - | 20V | +25V, -10V | ||||
VIEW |
2,280
In-stock
|
Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 555W (Tc) | N-Channel | - | 1200V | 80A (Tc) | 55 mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | - | 20V | +25V, -10V | ||||
VIEW |
2,774
In-stock
|
Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D3Pak | 220W (Tc) | N-Channel | - | 700V | 65A (Tc) | 70 mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | - | 20V | +25V, -10V | ||||
VIEW |
2,737
In-stock
|
Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 165W (Tc) | N-Channel | - | 700V | 49A (Tc) | 70 mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | - | 20V | +25V, -10V | ||||
VIEW |
2,226
In-stock
|
Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 300W (Tc) | N-Channel | - | 700V | 65A (Tc) | 70 mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | - | 20V | +25V, -10V | ||||
VIEW |
1,995
In-stock
|
Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 175W (Tc) | N-Channel | - | 1200V | 25A (Tc) | 175 mOhm @ 10A, 20V | 2.5V @ 1mA | 72nC @ 20V | - | 20V | +25V, -10V | ||||
VIEW |
1,687
In-stock
|
Microsemi Corporation | MOSFET N-CH 1200V 41A TO247 | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 273W (Tc) | N-Channel | - | 1200V | 41A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V | ||||
VIEW |
1,482
In-stock
|
Microsemi Corporation | MOSFET N-CH 1200V SOT227 | - | Active | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 300W (Tc) | N-Channel | - | 1200V | 71A (Tc) | 34 mOhm @ 50A, 20V | 2.3V @ 1mA (Typ) | 179nC @ 20V | 2980pF @ 1000V | 20V | +25V, -10V | ||||
VIEW |
2,655
In-stock
|
Cree/Wolfspeed | MOSFET N-CH 1700V 5.3A TO247 | C2M™ | Active | Tape & Reel (TR) | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK-7 | 78W (Tc) | N-Channel | - | 1700V | 5.3A (Tc) | 1.4 Ohm @ 2A, 20V | 3.1V @ 500µA (Typ) | 13nC @ 20V | 200pF @ 1000V | 20V | +25V, -10V | ||||
VIEW |
3,247
In-stock
|
Microsemi Corporation | MOSFET N-CH 700V D3PAK | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | 52W (Tc) | N-Channel | - | 1700V | 4.6A (Tc) | 1.2 Ohm @ 2A, 20V | 3.2V @ 500µA | 29nC @ 20V | 325pF @ 1000V | 20V | +25V, -10V | ||||
VIEW |
3,389
In-stock
|
Microsemi Corporation | MOSFET N-CH 700V TO247 | - | Obsolete | Tube | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 65W (Tc) | N-Channel | - | 1700V | 5A (Tc) | 1.25 Ohm @ 2.5A, 20V | 3.2V @ 500µA | 21nC @ 20V | 249pF @ 1000V | 20V | +25V, -10V | ||||
VIEW |
2,631
In-stock
|
Microsemi Corporation | MOSFET N-CH 700V TO247 | - | Obsolete | Tube | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 176W (Tc) | N-Channel | - | 700V | 35A (Tc) | 145 mOhm @ 10A, 20V | 2.5V @ 1mA | 67nC @ 20V | 1035pF @ 700V | 20V | +25V, -10V | ||||
VIEW |
623
In-stock
|
Microsemi Corporation | MOSFET N-CH 700V SOT227 | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 273W (Tc) | N-Channel | - | 700V | 78A (Tc) | 45 mOhm @ 60A, 20V | 2.4V @ 1mA | 270nC @ 20V | 3950pF @ 700V | 20V | +25V, -10V | ||||
VIEW |
2,985
In-stock
|
Microsemi Corporation | MOSFET N-CH 700V TO247 | - | Obsolete | Tube | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 556W (Tc) | N-Channel | - | 700V | 110A (Tc) | 45 mOhm @ 60A, 20V | 2.4V @ 1mA | 220nC @ 20V | 3950pF @ 700V | 20V | +25V, -10V | ||||
VIEW |
606
In-stock
|
STMicroelectronics | MOSFET N-CH 1200V 65A HIP247 | - | Active | - | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 318W (Tc) | N-Channel | - | 1200V | 65A (Tc) | 69 mOhm @ 40A, 20V | 3V @ 1mA | 122nC @ 20V | 1900pF @ 400V | 20V | +25V, -10V | ||||
VIEW |
1,223
In-stock
|
Cree/Wolfspeed | MOSFET NCH 1.7KV 72A TO247 | C2M™ | Active | Tube | SiCFET (Silicon Carbide) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 520W (Tc) | N-Channel | - | 1700V | 72A (Tc) | 70 mOhm @ 50A, 20V | 4V @ 18mA | 188nC @ 20V | 3672pF @ 1kV | 20V | +25V, -10V | ||||
VIEW |
603
In-stock
|
Cree/Wolfspeed | MOSFET N-CH 1200V 90A TO-247 | Z-FET™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 463W (Tc) | N-Channel | - | 1200V | 90A (Tc) | 34 mOhm @ 50A, 20V | 2.4V @ 10mA | 161nC @ 20V | 2788pF @ 1000V | 20V | +25V, -10V | ||||
VIEW |
3,736
In-stock
|
Cree/Wolfspeed | MOSFET N-CH 1200V 60A TO-247 | Z-FET™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 330W (Tc) | N-Channel | - | 1200V | 60A (Tc) | 52 mOhm @ 40A, 20V | 2.8V @ 10mA | 115nC @ 20V | 1893pF @ 1000V | 20V | +25V, -10V | ||||
VIEW |
1,535
In-stock
|
Cree/Wolfspeed | MOSFET N-CH 1200V 31.6A TO247 | C2M™ | Active | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 192W (Tc) | N-Channel | - | 1200V | 36A (Tc) | 98 mOhm @ 20A, 20V | 4V @ 5mA | 62nC @ 5V | 950pF @ 1000V | 20V | +25V, -10V | ||||
VIEW |
2,838
In-stock
|
Cree/Wolfspeed | MOSFET N-CH 1200V 19A TO-247 | Z-FET™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 125W (Tc) | N-Channel | - | 1200V | 19A (Tc) | 196 mOhm @ 10A, 20V | 2.5V @ 500µA | 32.6nC @ 20V | 527pF @ 800V | 20V | +25V, -10V | ||||
VIEW |
2,545
In-stock
|
Cree/Wolfspeed | ZFET SIC DMOSFET, 1700V VDS, RDS | C2M™ | Active | - | SiCFET (Silicon Carbide) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 520W (Tc) | N-Channel | - | 1700V | 72A (Tc) | 59 mOhm @ 50A, 20V | 4V @ 18mA | 188nC @ 20V | 3672pF @ 1000V | 20V | +25V, -10V | ||||
VIEW |
2,581
In-stock
|
STMicroelectronics | MOSFET N-CH 1.2KV TO247-3 | - | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 318W (Tc) | N-Channel | - | 1200V | 65A (Tc) | 69 mOhm @ 40A, 20V | 3V @ 1mA | 122nC @ 20V | 1900pF @ 400V | 20V | +25V, -10V | ||||
VIEW |
3,762
In-stock
|
Cree/Wolfspeed | ZFET SIC DMOSFET, 1700V VDS, RDS | C2M™ | Active | - | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 277W (Tc) | N-Channel | - | 1700V | 40A (Tc) | 125 mOhm @ 28A, 20V | 4V @ 10mA | 120nC @ 20V | 2250pF @ 1000V | 20V | +25V, -10V | ||||
VIEW |
2,566
In-stock
|
Cree/Wolfspeed | MOSFET N-CH 1200V 10A TO-247-3 | Z-FET™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 62.5W (Tc) | N-Channel | - | 1200V | 10A (Tc) | 370 mOhm @ 6A, 20V | 2.8V @ 1.25mA (Typ) | 20.4nC @ 20V | 259pF @ 1000V | 20V | +25V, -10V | ||||
VIEW |
2,972
In-stock
|
Cree/Wolfspeed | MOSFET N-CH 1700V 4.9A TO247 | Z-FET™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 69W (Tc) | N-Channel | - | 1700V | 4.9A (Tc) | 1.1 Ohm @ 2A, 20V | 2.4V @ 100µA | 13nC @ 20V | 191pF @ 1000V | 20V | +25V, -10V | ||||
VIEW |
1,824
In-stock
|
STMicroelectronics | MOSFET N-CH 1200V 45A HIP247 | - | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 270W (Tc) | N-Channel | - | 1200V | 40A (Tc) | 100 mOhm @ 20A, 20V | 2.6V @ 1mA (Typ) | 105nC @ 20V | 1700pF @ 400V | 20V | +25V, -10V | ||||
VIEW |
2,775
In-stock
|
STMicroelectronics | MOSFET N-CH 1200V 20A HIP247 | - | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 175W (Tc) | N-Channel | - | 1200V | 20A (Tc) | 290 mOhm @ 10A, 20V | 3.5V @ 1mA | 45nC @ 20V | 650pF @ 400V | 20V | +25V, -10V | ||||
VIEW |
3,118
In-stock
|
STMicroelectronics | MOSFET N-CH 1.2KV TO247-3 | - | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 150W (Tc) | N-Channel | - | 1200V | 12A (Tc) | 690 mOhm @ 6A, 20V | 3.5V @ 250µA | 22nC @ 20V | 290pF @ 400V | 20V | +25V, -10V | ||||
VIEW |
3,366
In-stock
|
Microsemi Corporation | MOSFET N-CH 1200V 32A SOT227 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 165W (Tc) | N-Channel | - | 1200V | 32A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V |