Drain to Source Voltage (Vdss) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2,502
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Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D3Pak 625W (Tc) N-Channel - 1200V 80A (Tc) 55 mOhm @ 40A, 20V 2.5V @ 1mA 235nC @ 20V - 20V +25V, -10V
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2,748
In-stock
Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 273W (Tc) N-Channel - 1200V 51A (Tc) 55 mOhm @ 40A, 20V 2.5V @ 1mA 235nC @ 20V - 20V +25V, -10V
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2,280
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Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 555W (Tc) N-Channel - 1200V 80A (Tc) 55 mOhm @ 40A, 20V 2.5V @ 1mA 235nC @ 20V - 20V +25V, -10V
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2,774
In-stock
Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D3Pak 220W (Tc) N-Channel - 700V 65A (Tc) 70 mOhm @ 32.5A, 20V 2.5V @ 1mA 125nC @ 20V - 20V +25V, -10V
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RFQ
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RFQ
2,737
In-stock
Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 165W (Tc) N-Channel - 700V 49A (Tc) 70 mOhm @ 32.5A, 20V 2.5V @ 1mA 125nC @ 20V - 20V +25V, -10V
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2,226
In-stock
Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 [B] 300W (Tc) N-Channel - 700V 65A (Tc) 70 mOhm @ 32.5A, 20V 2.5V @ 1mA 125nC @ 20V - 20V +25V, -10V
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RFQ
1,995
In-stock
Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 175W (Tc) N-Channel - 1200V 25A (Tc) 175 mOhm @ 10A, 20V 2.5V @ 1mA 72nC @ 20V - 20V +25V, -10V
APT40SM120B
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1,687
In-stock
Microsemi Corporation MOSFET N-CH 1200V 41A TO247 - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 273W (Tc) N-Channel - 1200V 41A (Tc) 100 mOhm @ 20A, 20V 3V @ 1mA (Typ) 130nC @ 20V 2560pF @ 1000V 20V +25V, -10V
APT50MC120JCU2
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1,482
In-stock
Microsemi Corporation MOSFET N-CH 1200V SOT227 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 300W (Tc) N-Channel - 1200V 71A (Tc) 34 mOhm @ 50A, 20V 2.3V @ 1mA (Typ) 179nC @ 20V 2980pF @ 1000V 20V +25V, -10V
C2M1000170J-TR
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2,655
In-stock
Cree/Wolfspeed MOSFET N-CH 1700V 5.3A TO247 C2M™ Active Tape & Reel (TR) SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 78W (Tc) N-Channel - 1700V 5.3A (Tc) 1.4 Ohm @ 2A, 20V 3.1V @ 500µA (Typ) 13nC @ 20V 200pF @ 1000V 20V +25V, -10V
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3,247
In-stock
Microsemi Corporation MOSFET N-CH 700V D3PAK - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3Pak 52W (Tc) N-Channel - 1700V 4.6A (Tc) 1.2 Ohm @ 2A, 20V 3.2V @ 500µA 29nC @ 20V 325pF @ 1000V 20V +25V, -10V
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RFQ
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3,389
In-stock
Microsemi Corporation MOSFET N-CH 700V TO247 - Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 65W (Tc) N-Channel - 1700V 5A (Tc) 1.25 Ohm @ 2.5A, 20V 3.2V @ 500µA 21nC @ 20V 249pF @ 1000V 20V +25V, -10V
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2,631
In-stock
Microsemi Corporation MOSFET N-CH 700V TO247 - Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 176W (Tc) N-Channel - 700V 35A (Tc) 145 mOhm @ 10A, 20V 2.5V @ 1mA 67nC @ 20V 1035pF @ 700V 20V +25V, -10V
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623
In-stock
Microsemi Corporation MOSFET N-CH 700V SOT227 - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 273W (Tc) N-Channel - 700V 78A (Tc) 45 mOhm @ 60A, 20V 2.4V @ 1mA 270nC @ 20V 3950pF @ 700V 20V +25V, -10V
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2,985
In-stock
Microsemi Corporation MOSFET N-CH 700V TO247 - Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 556W (Tc) N-Channel - 700V 110A (Tc) 45 mOhm @ 60A, 20V 2.4V @ 1mA 220nC @ 20V 3950pF @ 700V 20V +25V, -10V
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606
In-stock
STMicroelectronics MOSFET N-CH 1200V 65A HIP247 - Active - SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole TO-247-3 HiP247™ 318W (Tc) N-Channel - 1200V 65A (Tc) 69 mOhm @ 40A, 20V 3V @ 1mA 122nC @ 20V 1900pF @ 400V 20V +25V, -10V
C2M0045170D
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1,223
In-stock
Cree/Wolfspeed MOSFET NCH 1.7KV 72A TO247 C2M™ Active Tube SiCFET (Silicon Carbide) -40°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 520W (Tc) N-Channel - 1700V 72A (Tc) 70 mOhm @ 50A, 20V 4V @ 18mA 188nC @ 20V 3672pF @ 1kV 20V +25V, -10V
C2M0025120D
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603
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 90A TO-247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 463W (Tc) N-Channel - 1200V 90A (Tc) 34 mOhm @ 50A, 20V 2.4V @ 10mA 161nC @ 20V 2788pF @ 1000V 20V +25V, -10V
C2M0040120D
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3,736
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Cree/Wolfspeed MOSFET N-CH 1200V 60A TO-247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 330W (Tc) N-Channel - 1200V 60A (Tc) 52 mOhm @ 40A, 20V 2.8V @ 10mA 115nC @ 20V 1893pF @ 1000V 20V +25V, -10V
C2M0080120D
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1,535
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Cree/Wolfspeed MOSFET N-CH 1200V 31.6A TO247 C2M™ Active Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 192W (Tc) N-Channel - 1200V 36A (Tc) 98 mOhm @ 20A, 20V 4V @ 5mA 62nC @ 5V 950pF @ 1000V 20V +25V, -10V
C2M0160120D
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2,838
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Cree/Wolfspeed MOSFET N-CH 1200V 19A TO-247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 125W (Tc) N-Channel - 1200V 19A (Tc) 196 mOhm @ 10A, 20V 2.5V @ 500µA 32.6nC @ 20V 527pF @ 800V 20V +25V, -10V
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2,545
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Cree/Wolfspeed ZFET SIC DMOSFET, 1700V VDS, RDS C2M™ Active - SiCFET (Silicon Carbide) -40°C ~ 150°C (TJ) Through Hole TO-247-4 TO-247-4L 520W (Tc) N-Channel - 1700V 72A (Tc) 59 mOhm @ 50A, 20V 4V @ 18mA 188nC @ 20V 3672pF @ 1000V 20V +25V, -10V
SCT50N120
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RFQ
2,581
In-stock
STMicroelectronics MOSFET N-CH 1.2KV TO247-3 - Active Tube SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole TO-247-3 HiP247™ 318W (Tc) N-Channel - 1200V 65A (Tc) 69 mOhm @ 40A, 20V 3V @ 1mA 122nC @ 20V 1900pF @ 400V 20V +25V, -10V
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3,762
In-stock
Cree/Wolfspeed ZFET SIC DMOSFET, 1700V VDS, RDS C2M™ Active - SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 TO-247-4L 277W (Tc) N-Channel - 1700V 40A (Tc) 125 mOhm @ 28A, 20V 4V @ 10mA 120nC @ 20V 2250pF @ 1000V 20V +25V, -10V
C2M0280120D
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RFQ
2,566
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 10A TO-247-3 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 62.5W (Tc) N-Channel - 1200V 10A (Tc) 370 mOhm @ 6A, 20V 2.8V @ 1.25mA (Typ) 20.4nC @ 20V 259pF @ 1000V 20V +25V, -10V
C2M1000170D
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2,972
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Cree/Wolfspeed MOSFET N-CH 1700V 4.9A TO247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 69W (Tc) N-Channel - 1700V 4.9A (Tc) 1.1 Ohm @ 2A, 20V 2.4V @ 100µA 13nC @ 20V 191pF @ 1000V 20V +25V, -10V
SCT30N120
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1,824
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STMicroelectronics MOSFET N-CH 1200V 45A HIP247 - Active Tube SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole TO-247-3 HiP247™ 270W (Tc) N-Channel - 1200V 40A (Tc) 100 mOhm @ 20A, 20V 2.6V @ 1mA (Typ) 105nC @ 20V 1700pF @ 400V 20V +25V, -10V
SCT20N120
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2,775
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STMicroelectronics MOSFET N-CH 1200V 20A HIP247 - Active Tube SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole TO-247-3 HiP247™ 175W (Tc) N-Channel - 1200V 20A (Tc) 290 mOhm @ 10A, 20V 3.5V @ 1mA 45nC @ 20V 650pF @ 400V 20V +25V, -10V
SCT10N120
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3,118
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STMicroelectronics MOSFET N-CH 1.2KV TO247-3 - Active Tube SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole TO-247-3 HiP247™ 150W (Tc) N-Channel - 1200V 12A (Tc) 690 mOhm @ 6A, 20V 3.5V @ 250µA 22nC @ 20V 290pF @ 400V 20V +25V, -10V
APT40SM120J
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3,366
In-stock
Microsemi Corporation MOSFET N-CH 1200V 32A SOT227 - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 165W (Tc) N-Channel - 1200V 32A (Tc) 100 mOhm @ 20A, 20V 3V @ 1mA (Typ) 130nC @ 20V 2560pF @ 1000V 20V +25V, -10V