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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFH7187TRPBF	RFQ VIEW	PDF RFQ	812 In-stock	Infineon Technologies	MOSFET N-CH 100V 18A		FASTIRFET™, HEXFET®	Obsolete	Bulk	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-PQFN (5x6)	3.8W (Ta), 132W (Tc)	N-Channel	-	100V	18A (Ta), 105A (Tc)	6 mOhm @ 50A, 10V	3.6V @ 150µA	50nC @ 10V	2116pF @ 50V	10V	±20V
	IRFH7188TRPBF	RFQ VIEW	PDF RFQ	1,510 In-stock	Infineon Technologies	MOSFET N-CH 100V 18A		FASTIRFET™, HEXFET®	Obsolete	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PQFN (5x6)	3.8W (Ta), 132W (Tc)	N-Channel	-	100V	18A (Ta), 105A (Tc)	6 mOhm @ 50A, 10V	3.9V @ 150µA	50nC @ 10V	2116pF @ 50V	10V	±20V
	IRFH7188TRPBF	RFQ VIEW	PDF RFQ	1,508 In-stock	Infineon Technologies	MOSFET N-CH 100V 18A		FASTIRFET™, HEXFET®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PQFN (5x6)	3.8W (Ta), 132W (Tc)	N-Channel	-	100V	18A (Ta), 105A (Tc)	6 mOhm @ 50A, 10V	3.9V @ 150µA	50nC @ 10V	2116pF @ 50V	10V	±20V
	IRFH7188TRPBF	RFQ VIEW	PDF RFQ	3,928 In-stock	Infineon Technologies	MOSFET N-CH 100V 18A		FASTIRFET™, HEXFET®	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PQFN (5x6)	3.8W (Ta), 132W (Tc)	N-Channel	-	100V	18A (Ta), 105A (Tc)	6 mOhm @ 50A, 10V	3.9V @ 150µA	50nC @ 10V	2116pF @ 50V	10V	±20V

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