Supplier Device Package :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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GP1M020A060N
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RFQ
1,394
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Global Power Technologies Group MOSFET N-CH 600V 20A TO3PN - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 347W (Tc) N-Channel 600V 20A (Tc) 330 mOhm @ 10A, 10V 4V @ 250µA 76nC @ 10V 2097pF @ 25V 10V ±30V
GP1M020A060M
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RFQ
3,022
In-stock
Global Power Technologies Group MOSFET N-CH 600V 20A TO3P - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 347W (Tc) N-Channel 600V 20A (Tc) 330 mOhm @ 10A, 10V 4V @ 250µA 76nC @ 10V 2097pF @ 25V 10V ±30V