Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI08CN10N G
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3,549
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Infineon Technologies MOSFET N-CH 100V 95A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 167W (Tc) N-Channel - 100V 95A (Tc) 8.5 mOhm @ 95A, 10V 4V @ 130µA 100nC @ 10V 6660pF @ 50V 10V ±20V
IPB08CN10N G
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3,344
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Infineon Technologies MOSFET N-CH 100V 95A TO263-3 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 167W (Tc) N-Channel - 100V 95A (Tc) 8.2 mOhm @ 95A, 10V 4V @ 130µA 100nC @ 10V 6660pF @ 50V 10V ±20V
IPP08CN10N G
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1,229
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Infineon Technologies MOSFET N-CH 100V 95A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 167W (Tc) N-Channel - 100V 95A (Tc) 8.5 mOhm @ 95A, 10V 4V @ 130µA 100nC @ 10V 6660pF @ 50V 10V ±20V