Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Cree/Wolfspeed MOSFET N-CHANNEL 1200V 50A DIE Z-FET™ Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount Die 313mW (Tj) N-Channel - 1200V 50A (Tj) 110 mOhm @ 20A, 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V 20V +25V, -5V
CMF20120D
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Cree/Wolfspeed MOSFET N-CH 1200V 42A TO-247-3 Z-FET™ Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 135°C (TJ) Through Hole TO-247-3 215W (Tc) N-Channel - 1200V 42A (Tc) 110 mOhm @ 20A, 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V 20V +25V, -5V