Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPP100N06S3-03
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RFQ
3,354
In-stock
Infineon Technologies MOSFET N-CH 55V 100A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 300W (Tc) N-Channel - 55V 100A (Tc) 3.3 mOhm @ 80A, 10V 4V @ 230µA 480nC @ 10V 21620pF @ 25V 10V ±20V
IPI100N06S3-03
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RFQ
2,040
In-stock
Infineon Technologies MOSFET N-CH 55V 100A I2PAK OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 300W (Tc) N-Channel - 55V 100A (Tc) 3.3 mOhm @ 80A, 10V 4V @ 230µA 480nC @ 10V 21620pF @ 25V 10V ±20V
IPB100N06S3-03
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RFQ
1,583
In-stock
Infineon Technologies MOSFET N-CH 55V 100A D2PAK OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 300W (Tc) N-Channel - 55V 100A (Tc) 3 mOhm @ 80A, 10V 4V @ 230µA 480nC @ 10V 21620pF @ 25V 10V ±20V