Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFH5110TR2PBF
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3,535
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Infineon Technologies MOSFET N-CH 100V 5X6 PQFN HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 100V 11A (Ta), 63A (Tc) 12.4 mOhm @ 37A, 10V 4V @ 100µA 72nC @ 10V 3152pF @ 25V 10V ±20V
IRFH5110TR2PBF
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RFQ
1,289
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Infineon Technologies MOSFET N-CH 100V 5X6 PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 100V 11A (Ta), 63A (Tc) 12.4 mOhm @ 37A, 10V 4V @ 100µA 72nC @ 10V 3152pF @ 25V 10V ±20V
IRFH5110TRPBF
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RFQ
1,854
In-stock
Infineon Technologies MOSFET N-CH 100V 11A 8-PQFN HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 100V 11A (Ta), 63A (Tc) 12.4 mOhm @ 37A, 10V 4V @ 100µA 72nC @ 10V 3152pF @ 25V 10V ±20V