- Series :
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- Operating Temperature :
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- Power Dissipation (Max) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
889
In-stock
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Global Power Technologies Group | MOSFET N-CH 900V 11A TO3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 416W (Tc) | N-Channel | - | 900V | 11A (Tc) | 900 mOhm @ 5.5A, 10V | 5V @ 250µA | 84nC @ 10V | 3240pF @ 25V | 10V | ±30V | |||
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VIEW |
3,202
In-stock
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Infineon Technologies | MOSFET N CH 100V 11A PQFN5X6 | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | 8-PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 100V | 11A (Ta), 58A (Tc) | 13.5 mOhm @ 35A, 10V | 4V @ 100µA | 87nC @ 10V | 3240pF @ 25V | 10V | ±20V | |||
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VIEW |
2,333
In-stock
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Infineon Technologies | MOSFET N CH 100V 11A PQFN5X6 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | 8-PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 100V | 11A (Ta), 58A (Tc) | 13.5 mOhm @ 35A, 10V | 4V @ 100µA | 87nC @ 10V | 3240pF @ 25V | 10V | ±20V | |||
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VIEW |
2,610
In-stock
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IXYS | MOSFET N-CH 40V 120A TO-263 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXTA) | 200W (Tc) | N-Channel | - | 40V | 120A (Tc) | 6.1 mOhm @ 25A, 10V | 4V @ 250µA | 58nC @ 10V | 3240pF @ 25V | 10V | ±20V | |||
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VIEW |
3,126
In-stock
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IXYS | MOSFET N-CH 40V 120A TO-220 | TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 40V | 120A (Tc) | 6.1 mOhm @ 25A, 10V | 4V @ 250µA | 58nC @ 10V | 3240pF @ 25V | 10V | ±20V | |||
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VIEW |
2,533
In-stock
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Infineon Technologies | MOSFET N CH 100V 11A PQFN 5X6 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | 8-PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 100V | 11A (Ta), 58A (Tc) | 13.5 mOhm @ 35A, 10V | 4V @ 100µA | 87nC @ 10V | 3240pF @ 25V | 10V | ±20V | |||
