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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
622
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 2.7A TSM | U-MOSII | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 30V | 2.7A (Ta) | 85 mOhm @ 1.35A, 10V | - | 413pF @ 15V | 4V, 10V | ±20V | |||
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VIEW |
3,523
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 2.7A TSM | U-MOSII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 30V | 2.7A (Ta) | 85 mOhm @ 1.35A, 10V | - | 413pF @ 15V | 4V, 10V | ±20V | |||
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VIEW |
3,138
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 2.7A TSM | U-MOSII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 30V | 2.7A (Ta) | 85 mOhm @ 1.35A, 10V | - | 413pF @ 15V | 4V, 10V | ±20V | |||
