Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTA2N100P
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RFQ
1,554
In-stock
IXYS MOSFET N-CH 1000V 2A TO-263 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 86W (Tc) N-Channel - 1000V 2A (Tc) 7.5 Ohm @ 500mA, 10V 4.5V @ 100µA 24.3nC @ 10V 655pF @ 25V 10V ±20V
IXTP2N100P
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RFQ
3,655
In-stock
IXYS MOSFET N-CH 1000V 2A TO-220 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 86W (Tc) N-Channel - 1000V 2A (Tc) 7.5 Ohm @ 500mA, 10V 4.5V @ 100µA 24.3nC @ 10V 655pF @ 25V 10V ±20V
IXTY2N100P
RFQ
VIEW
RFQ
1,273
In-stock
IXYS MOSFET N-CH 1000V 2A TO-252 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 86W (Tc) N-Channel - 1000V 2A (Tc) 7.5 Ohm @ 500mA, 10V 4.5V @ 100µA 24.3nC @ 10V 655pF @ 25V 10V ±20V