- Manufacture :
- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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SOT223-1.jpg)
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VIEW |
1,369
In-stock
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NXP USA Inc. | MOSFET N-CH 55V 5.5A SOT223 | TrenchMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 8.3W (Tc) | N-Channel | 55V | 5.5A (Tc) | 150 mOhm @ 5A, 10V | 4V @ 1mA | 5.6nC @ 10V | 175pF @ 25V | 10V | ±20V | |||
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VIEW |
2,316
In-stock
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NXP USA Inc. | MOSFET N-CH 55V 5.5A SOT223 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 8.3W (Tc) | N-Channel | 55V | 5.5A (Tc) | 150 mOhm @ 5A, 10V | 4V @ 1mA | 5.6nC @ 10V | 175pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,115
In-stock
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NXP USA Inc. | MOSFET N-CH 55V 5.5A SOT223 | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 8.3W (Tc) | N-Channel | 55V | 5.5A (Tc) | 150 mOhm @ 5A, 10V | 4V @ 1mA | 5.6nC @ 10V | 175pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,383
In-stock
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Rohm Semiconductor | MOSFET N-CH 600V CPT | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 20W (Tc) | N-Channel | 600V | 2A (Tc) | 6.7 Ohm @ 1A, 10V | 4.7V @ 1mA | 7nC @ 10V | 175pF @ 25V | 10V | ±30V | |||
