Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
NDF02N60ZG
RFQ
VIEW
RFQ
778
In-stock
ON Semiconductor MOSFET N-CH 600V 2.4A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 24W (Tc) N-Channel 600V 2.4A (Tc) 4.8 Ohm @ 1A, 10V 4.5V @ 50µA 10.1nC @ 10V 274pF @ 25V 10V ±30V
NDD03N50Z-1G
RFQ
VIEW
RFQ
1,835
In-stock
ON Semiconductor MOSFET N-CH 500V 2.6A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 58W (Tc) N-Channel 500V 2.6A (Tc) 3.3 Ohm @ 1.15A, 10V 4.5V @ 50µA 10nC @ 10V 274pF @ 25V 10V ±30V
NDD02N60Z-1G
RFQ
VIEW
RFQ
1,475
In-stock
ON Semiconductor MOSFET N-CH 600V IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 57W (Tc) N-Channel 600V 2.2A (Tc) 4.8 Ohm @ 1A, 10V 4.5V @ 50µA 10.1nC @ 10V 274pF @ 25V 10V ±30V