Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSB013NE2LXIXUMA1
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Infineon Technologies MOSFET N-CH 25V 163A WDSON-2 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 3-WDSON MG-WDSON-2, CanPAK M™ 2.8W (Ta), 57W (Tc) N-Channel - 25V 36A (Ta), 163A (Tc) 1.3 mOhm @ 30A, 10V 2V @ 250µA 62nC @ 10V 4400pF @ 12V 4.5V, 10V ±20V
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Infineon Technologies MOSFET N-CH 25V 163A WDSON-2 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 3-WDSON MG-WDSON-2, CanPAK M™ 2.8W (Ta), 57W (Tc) N-Channel - 25V 36A (Ta), 163A (Tc) 1.3 mOhm @ 30A, 10V 2V @ 250µA 62nC @ 10V 4400pF @ 12V 4.5V, 10V ±20V
BSB013NE2LXIXUMA1
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Infineon Technologies MOSFET N-CH 25V 163A WDSON-2 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 3-WDSON MG-WDSON-2, CanPAK M™ 2.8W (Ta), 57W (Tc) N-Channel - 25V 36A (Ta), 163A (Tc) 1.3 mOhm @ 30A, 10V 2V @ 250µA 62nC @ 10V 4400pF @ 12V 4.5V, 10V ±20V