Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 36A SOP8 ADV - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel 30V 36A (Ta) 5.6 mOhm @ 18A, 10V 2.3V @ 1mA 35nC @ 10V 1970pF @ 10V 4.5V, 10V ±20V
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 16A SOP8 2-6J1B - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) N-Channel 30V 16A (Ta) 5.6 mOhm @ 8A, 10V 2.3V @ 1mA 34nC @ 10V 1970pF @ 10V 4.5V, 10V ±20V