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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF6720S2TRPBF	RFQ VIEW	PDF RFQ	1,471 In-stock	Infineon Technologies	MOSFET N-CH 30V 11A DIRECTFET-S1		HEXFET®	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	DirectFET™ Isometric S1	DIRECTFET S1	1.7W (Ta), 17W (Tc)	N-Channel	-	30V	11A (Ta), 35A (Tc)	8 mOhm @ 11A, 10V	2.35V @ 25µA	12nC @ 4.5V	1140pF @ 15V	4.5V, 10V	±20V
	IRF6720S2TR1PBF	RFQ VIEW	PDF RFQ	835 In-stock	Infineon Technologies	MOSFET N-CH 30V 11A DIRECTFET		HEXFET®	Obsolete	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	DirectFET™ Isometric S1	DIRECTFET S1	1.7W (Ta), 17W (Tc)	N-Channel	-	30V	11A (Ta), 35A (Tc)	8 mOhm @ 11A, 10V	2.35V @ 25µA	12nC @ 4.5V	1140pF @ 15V	4.5V, 10V	±20V
	IRF6720S2TR1PBF	RFQ VIEW	PDF RFQ	3,496 In-stock	Infineon Technologies	MOSFET N-CH 30V 11A DIRECTFET		HEXFET®	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	DirectFET™ Isometric S1	DIRECTFET S1	1.7W (Ta), 17W (Tc)	N-Channel	-	30V	11A (Ta), 35A (Tc)	8 mOhm @ 11A, 10V	2.35V @ 25µA	12nC @ 4.5V	1140pF @ 15V	4.5V, 10V	±20V
	IRF6720S2TR1PBF	RFQ VIEW	PDF RFQ	1,489 In-stock	Infineon Technologies	MOSFET N-CH 30V 11A DIRECTFET		HEXFET®	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	DirectFET™ Isometric S1	DIRECTFET S1	1.7W (Ta), 17W (Tc)	N-Channel	-	30V	11A (Ta), 35A (Tc)	8 mOhm @ 11A, 10V	2.35V @ 25µA	12nC @ 4.5V	1140pF @ 15V	4.5V, 10V	±20V

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