Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation MOSFET N-CH 1000V 25A SOT-227 POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 520W (Tc) N-Channel - 1000V 25A (Tc) 350 mOhm @ 14A, 10V 5V @ 2.5mA 186nC @ 10V 5185pF @ 25V 10V ±30V
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Microsemi Corporation MOSFET N-CH 1000V 28A T-MAX POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 690W (Tc) N-Channel - 1000V 28A (Tc) 350 mOhm @ 14A, 10V 5V @ 2.5mA 186nC @ 10V 5185pF @ 25V 10V ±30V