Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM220NB06CR RLG
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Taiwan Semiconductor Corporation MOSFET SINGLE N-CHANNEL TRENCH - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerLDFN 8-PDFN (5x6) 3.1W (Ta), 68W (Tc) N-Channel 60V 8A (Ta), 35A (Tc) 22 mOhm @ 8A, 10V 4V @ 250µA 23nC @ 10V 1454pF @ 30V 10V ±20V
TSM220NB06CR RLG
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3,710
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Taiwan Semiconductor Corporation MOSFET SINGLE N-CHANNEL TRENCH - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerLDFN 8-PDFN (5x6) 3.1W (Ta), 68W (Tc) N-Channel 60V 8A (Ta), 35A (Tc) 22 mOhm @ 8A, 10V 4V @ 250µA 23nC @ 10V 1454pF @ 30V 10V ±20V
TSM220NB06CR RLG
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2,841
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Taiwan Semiconductor Corporation MOSFET SINGLE N-CHANNEL TRENCH - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerLDFN 8-PDFN (5x6) 3.1W (Ta), 68W (Tc) N-Channel 60V 8A (Ta), 35A (Tc) 22 mOhm @ 8A, 10V 4V @ 250µA 23nC @ 10V 1454pF @ 30V 10V ±20V