Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI7113ADN-T1-GE3
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Vishay Siliconix MOSFET P-CH 100V 10.8A 1212-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 27.8W (Tc) P-Channel - 100V 10.8A (Tc) 132 mOhm @ 3.8A, 10V 2.6V @ 250µA 16.5nC @ 10V 515pF @ 50V 4.5V, 10V ±20V
SI7113ADN-T1-GE3
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1,859
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Vishay Siliconix MOSFET P-CH 100V 10.8A 1212-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 27.8W (Tc) P-Channel - 100V 10.8A (Tc) 132 mOhm @ 3.8A, 10V 2.6V @ 250µA 16.5nC @ 10V 515pF @ 50V 4.5V, 10V ±20V
SI7113ADN-T1-GE3
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3,800
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Vishay Siliconix MOSFET P-CH 100V 10.8A 1212-8 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 27.8W (Tc) P-Channel - 100V 10.8A (Tc) 132 mOhm @ 3.8A, 10V 2.6V @ 250µA 16.5nC @ 10V 515pF @ 50V 4.5V, 10V ±20V