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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,805
In-stock
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Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,774
In-stock
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Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,260
In-stock
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Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,329
In-stock
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Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,400
In-stock
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Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,893
In-stock
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Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,188
In-stock
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Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | 4.5V, 10V | ±20V | |||
