- Manufacture :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
612
In-stock
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ON Semiconductor | MOSFET N-CH 600V 3.1A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 27W (Tc) | N-Channel | - | 600V | 3.1A (Tc) | 3.6 Ohm @ 1.2A, 10V | 4.5V @ 50µA | 18nC @ 10V | 372pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,193
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 1A SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 1A (Tc) | 800 mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,660
In-stock
|
ON Semiconductor | MOSFET N-CH 600V 3.1A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 27W (Tc) | N-Channel | - | 600V | 3.1A (Tc) | 3.6 Ohm @ 1.2A, 10V | 4.5V @ 50µA | 18nC @ 10V | 372pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,528
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 4.2A TO252-3 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 38W (Tc) | P-Channel | - | 100V | 4.2A (Tc) | 850 mOhm @ 3A, 10V | 2V @ 380µA | 16nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,160
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 4.2A TO252-3 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 38W (Tc) | P-Channel | - | 100V | 4.2A (Tc) | 850 mOhm @ 3A, 10V | 2V @ 380µA | 16nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,071
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 4.2A TO252-3 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 38W (Tc) | P-Channel | - | 100V | 4.2A (Tc) | 850 mOhm @ 3A, 10V | 2V @ 380µA | 16nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,203
In-stock
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Infineon Technologies | MOSFET P-CH 100V 1A SOT-223 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 1A (Tc) | 800 mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,738
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 1A SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 1A (Tc) | 800 mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,751
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 1A SOT-223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 1A (Tc) | 800 mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | |||
