Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM061NA03CV RGG
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Taiwan Semiconductor Corporation MOSFET N-CH 30V 66A 8PDFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-PDFN (3x3) 44.6W (Tc) N-Channel 30V 66A (Tc) 6.1 mOhm @ 16A, 10V 2.5V @ 250µA 19.3nC @ 10V 1136pF @ 15V 4.5V, 10V ±20V
TSM061NA03CV RGG
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Taiwan Semiconductor Corporation MOSFET N-CH 30V 66A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-PDFN (3x3) 44.6W (Tc) N-Channel 30V 66A (Tc) 6.1 mOhm @ 16A, 10V 2.5V @ 250µA 19.3nC @ 10V 1136pF @ 15V 4.5V, 10V ±20V
TSM061NA03CV RGG
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2,332
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Taiwan Semiconductor Corporation MOSFET N-CH 30V 66A 8PDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-PDFN (3x3) 44.6W (Tc) N-Channel 30V 66A (Tc) 6.1 mOhm @ 16A, 10V 2.5V @ 250µA 19.3nC @ 10V 1136pF @ 15V 4.5V, 10V ±20V