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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF8734PBF	RFQ VIEW	PDF RFQ	2,002 In-stock	Infineon Technologies	MOSFET N-CH 30V 21A 8-SOIC		HEXFET®	Discontinued at Digi-Key	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO	2.5W (Ta)	N-Channel	-	30V	21A (Ta)	3.5 mOhm @ 21A, 10V	2.35V @ 50µA	30nC @ 4.5V	3175pF @ 15V	4.5V, 10V	±20V
	IRF8734TRPBF	RFQ VIEW	PDF RFQ	3,402 In-stock	Infineon Technologies	MOSFET N-CH 30V 21A 8-SOIC		HEXFET®	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO	2.5W (Ta)	N-Channel	-	30V	21A (Ta)	3.5 mOhm @ 21A, 10V	2.35V @ 50µA	30nC @ 4.5V	3175pF @ 15V	4.5V, 10V	±20V
	IRF8734TRPBF	RFQ VIEW	PDF RFQ	1,961 In-stock	Infineon Technologies	MOSFET N-CH 30V 21A 8-SOIC		HEXFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO	2.5W (Ta)	N-Channel	-	30V	21A (Ta)	3.5 mOhm @ 21A, 10V	2.35V @ 50µA	30nC @ 4.5V	3175pF @ 15V	4.5V, 10V	±20V
	IRF8734TRPBF	RFQ VIEW	PDF RFQ	802 In-stock	Infineon Technologies	MOSFET N-CH 30V 21A 8-SOIC		HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO	2.5W (Ta)	N-Channel	-	30V	21A (Ta)	3.5 mOhm @ 21A, 10V	2.35V @ 50µA	30nC @ 4.5V	3175pF @ 15V	4.5V, 10V	±20V

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