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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,633
In-stock
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Infineon Technologies | MOSFET N-CH 20V 120A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 89W (Tc) | N-Channel | - | 20V | 120A (Tc) | 4 mOhm @ 15A, 10V | 2.45V @ 250µA | 31nC @ 4.5V | 2830pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
3,395
In-stock
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Infineon Technologies | MOSFET N-CH 20V 120A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 89W (Tc) | N-Channel | - | 20V | 120A (Tc) | 4 mOhm @ 15A, 10V | 2.45V @ 250µA | 31nC @ 4.5V | 2830pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
3,141
In-stock
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Infineon Technologies | MOSFET N-CH 20V 120A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 89W (Tc) | N-Channel | - | 20V | 120A (Tc) | 4 mOhm @ 15A, 10V | 2.45V @ 250µA | 31nC @ 4.5V | 2830pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,468
In-stock
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Infineon Technologies | MOSFET N-CH 20V 120A DPAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 89W (Tc) | N-Channel | - | 20V | 120A (Tc) | 4 mOhm @ 15A, 10V | 2.45V @ 250µA | 31nC @ 4.5V | 2830pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
680
In-stock
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Infineon Technologies | MOSFET N-CH 20V 120A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 89W (Tc) | N-Channel | - | 20V | 120A (Tc) | 4 mOhm @ 15A, 10V | 2.45V @ 250µA | 31nC @ 4.5V | 2830pF @ 10V | 4.5V, 10V | ±20V | |||
