Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPP065N04N G
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2,235
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Infineon Technologies MOSFET N-CH 40V 50A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 68W (Tc) N-Channel - 40V 50A (Tc) 6.5 mOhm @ 50A, 10V 4V @ 200µA 34nC @ 10V 2800pF @ 20V 10V ±20V
PHK28NQ03LT,518
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RFQ
1,801
In-stock
NXP USA Inc. MOSFET N-CH 30V 23.7A 8SOIC TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 6.25W (Tc) N-Channel - 30V 23.7A (Tc) 6.5 mOhm @ 14A, 10V 2V @ 1mA 30.3nC @ 4.5V 2800pF @ 20V 4.5V, 10V ±20V
BSC054N04NSGATMA1
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RFQ
1,891
In-stock
Infineon Technologies MOSFET N-CH 40V 81A TDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 57W (Tc) N-Channel - 40V 17A (Ta), 81A (Tc) 5.4 mOhm @ 50A, 10V 4V @ 27µA 34nC @ 10V 2800pF @ 20V 10V ±20V
BSC054N04NSGATMA1
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RFQ
666
In-stock
Infineon Technologies MOSFET N-CH 40V 81A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 57W (Tc) N-Channel - 40V 17A (Ta), 81A (Tc) 5.4 mOhm @ 50A, 10V 4V @ 27µA 34nC @ 10V 2800pF @ 20V 10V ±20V
BSC054N04NSGATMA1
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VIEW
RFQ
1,378
In-stock
Infineon Technologies MOSFET N-CH 40V 81A TDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 57W (Tc) N-Channel - 40V 17A (Ta), 81A (Tc) 5.4 mOhm @ 50A, 10V 4V @ 27µA 34nC @ 10V 2800pF @ 20V 10V ±20V