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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IPB023N04NGATMA1	RFQ VIEW	PDF RFQ	1,993 In-stock	Infineon Technologies	MOSFET N-CH 40V 90A TO263-3		OptiMOS™	Obsolete	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D²PAK (TO-263AB)	167W (Tc)	N-Channel	-	40V	90A (Tc)	2.3 mOhm @ 90A, 10V	4V @ 95µA	120nC @ 10V	10000pF @ 20V	10V	±20V
	IPB023N04NGATMA1	RFQ VIEW	PDF RFQ	3,787 In-stock	Infineon Technologies	MOSFET N-CH 40V 90A TO263-3		OptiMOS™	Obsolete	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D²PAK (TO-263AB)	167W (Tc)	N-Channel	-	40V	90A (Tc)	2.3 mOhm @ 90A, 10V	4V @ 95µA	120nC @ 10V	10000pF @ 20V	10V	±20V
	IPB023N04NGATMA1	RFQ VIEW	PDF RFQ	3,306 In-stock	Infineon Technologies	MOSFET N-CH 40V 90A TO263-3		OptiMOS™	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D²PAK (TO-263AB)	167W (Tc)	N-Channel	-	40V	90A (Tc)	2.3 mOhm @ 90A, 10V	4V @ 95µA	120nC @ 10V	10000pF @ 20V	10V	±20V
	IPP023N04NGXKSA1	RFQ VIEW	PDF RFQ	3,697 In-stock	Infineon Technologies	MOSFET N-CH 40V 90A TO220-3		OptiMOS™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	PG-TO-220-3	167W (Tc)	N-Channel	-	40V	90A (Tc)	2.3 mOhm @ 90A, 10V	4V @ 95µA	120nC @ 10V	10000pF @ 20V	10V	±20V

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