Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage PB-F POWER MOSFET TRANSISTOR TO- U-MOSIX Active Tube MOSFET (Metal Oxide) 150°C Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 600V 11A (Ta) 650 mOhm @ 5.5A, 10V 4V @ 1.16mA 34nC @ 10V 1320pF @ 300V 10V ±30V