Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF1704
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1,645
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Infineon Technologies MOSFET N-CH 40V 170A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 200°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 40V 170A (Tc) 4 mOhm @ 100A, 10V 4V @ 250µA 260nC @ 10V 6950pF @ 25V 10V ±20V
IXFR64N50Q3
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1,636
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IXYS MOSFET N-CH 500V 45A ISOPLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 ISOPLUS247™ 500W (Tc) N-Channel - 500V 45A (Tc) 95 mOhm @ 32A, 10V 6.5V @ 4mA 145nC @ 10V 6950pF @ 25V 10V ±30V
IXFK64N50Q3
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720
In-stock
IXYS MOSFET N-CH 500V 64A TO-264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 1000W (Tc) N-Channel - 500V 64A (Tc) 85 mOhm @ 32A, 10V 6.5V @ 4mA 145nC @ 10V 6950pF @ 25V 10V ±30V
IXFX64N50Q3
RFQ
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RFQ
2,868
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IXYS MOSFET N-CH 500V 64A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1000W (Tc) N-Channel - 500V 64A (Tc) 85 mOhm @ 32A, 10V 6.5V @ 4mA 145nC @ 10V 6950pF @ 25V 10V ±30V