Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIE806DF-T1-GE3
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1,288
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Vishay Siliconix MOSFET N-CH 30V 60A POLARPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 30V 60A (Tc) 1.7 mOhm @ 25A, 10V 2V @ 250µA 250nC @ 10V 13000pF @ 15V 4.5V, 10V ±12V
SIE806DF-T1-E3
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3,818
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Vishay Siliconix MOSFET N-CH 30V 60A 10-POLARPAK TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 30V 60A (Tc) 1.7 mOhm @ 25A, 10V 2V @ 250µA 250nC @ 10V 13000pF @ 15V 4.5V, 10V ±12V
SIE806DF-T1-E3
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2,282
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Vishay Siliconix MOSFET N-CH 30V 60A 10-POLARPAK TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 30V 60A (Tc) 1.7 mOhm @ 25A, 10V 2V @ 250µA 250nC @ 10V 13000pF @ 15V 4.5V, 10V ±12V
SIE806DF-T1-E3
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RFQ
3,488
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Vishay Siliconix MOSFET N-CH 30V 60A 10-POLARPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 30V 60A (Tc) 1.7 mOhm @ 25A, 10V 2V @ 250µA 250nC @ 10V 13000pF @ 15V 4.5V, 10V ±12V
BSC014N03MSGATMA1
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3,904
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Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 OptiMOS™ Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 139W (Tc) N-Channel - 30V 30A (Ta), 100A (Tc) 1.4 mOhm @ 30A, 10V 2V @ 250µA 173nC @ 10V 13000pF @ 15V 4.5V, 10V ±20V
BSC014N03MSGATMA1
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RFQ
643
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Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 OptiMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 139W (Tc) N-Channel - 30V 30A (Ta), 100A (Tc) 1.4 mOhm @ 30A, 10V 2V @ 250µA 173nC @ 10V 13000pF @ 15V 4.5V, 10V ±20V
BSC014N03MSGATMA1
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RFQ
3,164
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Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 139W (Tc) N-Channel - 30V 30A (Ta), 100A (Tc) 1.4 mOhm @ 30A, 10V 2V @ 250µA 173nC @ 10V 13000pF @ 15V 4.5V, 10V ±20V
BSC016N03MSGATMA1
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3,106
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Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 125W (Tc) N-Channel - 30V 28A (Ta), 100A (Tc) 1.6 mOhm @ 30A, 10V 2V @ 250µA 173nC @ 10V 13000pF @ 15V 4.5V, 10V ±20V
BSC016N03MSGATMA1
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RFQ
3,242
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Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 125W (Tc) N-Channel - 30V 28A (Ta), 100A (Tc) 1.6 mOhm @ 30A, 10V 2V @ 250µA 173nC @ 10V 13000pF @ 15V 4.5V, 10V ±20V
BSC016N03MSGATMA1
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RFQ
2,470
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Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 125W (Tc) N-Channel - 30V 28A (Ta), 100A (Tc) 1.6 mOhm @ 30A, 10V 2V @ 250µA 173nC @ 10V 13000pF @ 15V 4.5V, 10V ±20V