Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK35E08N1,S1X
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1,291
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Toshiba Semiconductor and Storage MOSFET N-CH 80V 55A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 72W (Tc) N-Channel - 80V 55A (Tc) 12.2 mOhm @ 17.5A, 10V 4V @ 300µA 25nC @ 10V 1700pF @ 40V 10V ±20V
TK35A08N1,S4X
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3,500
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Toshiba Semiconductor and Storage MOSFET N-CH 80V 35A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 80V 35A (Tc) 12.2 mOhm @ 17.5A, 10V 4V @ 300µA 25nC @ 10V 1700pF @ 40V 10V ±20V
BSZ123N08NS3GATMA1
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3,786
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Infineon Technologies MOSFET N-CH 80V 40A TSDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PG-TSDSON-8 2.1W (Ta), 66W (Tc) N-Channel - 80V 10A (Ta), 40A (Tc) 12.3 mOhm @ 20A, 10V 3.5V @ 33µA 25nC @ 10V 1700pF @ 40V 6V, 10V ±20V
BSZ123N08NS3GATMA1
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3,601
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Infineon Technologies MOSFET N-CH 80V 40A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PG-TSDSON-8 2.1W (Ta), 66W (Tc) N-Channel - 80V 10A (Ta), 40A (Tc) 12.3 mOhm @ 20A, 10V 3.5V @ 33µA 25nC @ 10V 1700pF @ 40V 6V, 10V ±20V
BSZ123N08NS3GATMA1
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RFQ
1,211
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Infineon Technologies MOSFET N-CH 80V 40A TSDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PG-TSDSON-8 2.1W (Ta), 66W (Tc) N-Channel - 80V 10A (Ta), 40A (Tc) 12.3 mOhm @ 20A, 10V 3.5V @ 33µA 25nC @ 10V 1700pF @ 40V 6V, 10V ±20V