Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPP65R074C6XKSA1
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945
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Infineon Technologies MOSFET N-CH 650V 57.7A TO220 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 480.8W (Tc) N-Channel - 650V 57.7A (Tc) 74 mOhm @ 13.9A, 10V 3.5V @ 1.4mA 17nC @ 10V 3020pF @ 100V 10V ±20V
IPP60R074C6XKSA1
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2,193
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Infineon Technologies MOSFET N-CH 600V 57.7A TO220 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 480.8W (Tc) N-Channel - 600V 57.7A (Tc) 74 mOhm @ 21A, 10V 3.5V @ 1.4mA 138nC @ 10V 3020pF @ 100V 10V ±20V
IPL65R070C7AUMA1
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2,844
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Infineon Technologies MOSFET N-CH 4VSON CoolMOS™ C7 Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 4-PowerTSFN PG-VSON-4 169W (Tc) N-Channel - 650V 28A (Tc) 70 mOhm @ 8.5A, 10V 4V @ 850µA 64nC @ 10V 3020pF @ 100V 10V ±20V
IPL65R070C7AUMA1
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RFQ
3,934
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Infineon Technologies MOSFET N-CH 4VSON CoolMOS™ C7 Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 4-PowerTSFN PG-VSON-4 169W (Tc) N-Channel - 650V 28A (Tc) 70 mOhm @ 8.5A, 10V 4V @ 850µA 64nC @ 10V 3020pF @ 100V 10V ±20V
IPL65R070C7AUMA1
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RFQ
876
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Infineon Technologies MOSFET N-CH 4VSON CoolMOS™ C7 Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 4-PowerTSFN PG-VSON-4 169W (Tc) N-Channel - 650V 28A (Tc) 70 mOhm @ 8.5A, 10V 4V @ 850µA 64nC @ 10V 3020pF @ 100V 10V ±20V