- Manufacture :
- Packaging :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
807
In-stock
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Diodes Incorporated | MOSFET N-CHAN 41V 60V X1-DFN1006 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | X1-DFN1006-3 | 500mW (Ta) | N-Channel | - | 60V | 320mA (Ta) | 2 Ohm @ 100mA, 4V | 1V @ 250µA | 0.9nC @ 4.5V | 64pF @ 25V | 1.5V, 4V | ±20V | |||
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VIEW |
3,426
In-stock
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Diodes Incorporated | MOSFET N-CHAN 41V 60V X1-DFN1006 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | X1-DFN1006-3 | 500mW (Ta) | N-Channel | - | 60V | 320mA (Ta) | 2 Ohm @ 100mA, 4V | 1V @ 250µA | 0.9nC @ 4.5V | 64pF @ 25V | 1.5V, 4V | ±20V | |||
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VIEW |
3,195
In-stock
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Diodes Incorporated | MOSFET N-CHAN 41V 60V X1-DFN1006 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | X1-DFN1006-3 | 500mW (Ta) | N-Channel | - | 60V | 320mA (Ta) | 2 Ohm @ 100mA, 4V | 1V @ 250µA | 0.9nC @ 4.5V | 64pF @ 25V | 1.5V, 4V | ±20V | |||
|
VIEW |
3,468
In-stock
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Infineon Technologies | MOSFET N-CH 60V 1.2A SOT23-3 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | N-Channel | - | 60V | 1.2A (Ta) | 480 mOhm @ 1.2A, 10V | 2.5V @ 25µA | 0.67nC @ 4.5V | 64pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
1,390
In-stock
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Infineon Technologies | MOSFET N-CH 60V 1.2A SOT23-3 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | N-Channel | - | 60V | 1.2A (Ta) | 480 mOhm @ 1.2A, 10V | 2.5V @ 25µA | 0.67nC @ 4.5V | 64pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
962
In-stock
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Infineon Technologies | MOSFET N-CH 60V 1.2A SOT23-3 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | N-Channel | - | 60V | 1.2A (Ta) | 480 mOhm @ 1.2A, 10V | 2.5V @ 25µA | 0.67nC @ 4.5V | 64pF @ 25V | 4.5V, 10V | ±16V | |||
