Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Cree/Wolfspeed MOSFET N-CHANNEL 1200V 28A DIE Z-FET™ Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount Die Die 202W (Tj) N-Channel - 1200V 28A (Tj) 220 mOhm @ 10A, 20V 4V @ 1mA 47.1nC @ 20V 928pF @ 800V 20V +25V, -5V
CMF10120D
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965
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Cree/Wolfspeed MOSFET N-CH 1200V 24A TO247 Z-FET™ Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 135°C (TJ) Through Hole TO-247-3 TO-247 134W (Tc) N-Channel - 1200V 24A (Tc) 220 mOhm @ 10A, 20V 4V @ 500µA 47.1nC @ 20V 928pF @ 800V 20V +25V, -5V