Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 48A 8SOP-ADV U-MOSVII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 63W (Tc) N-Channel - 30V 48A (Ta) 2.2 mOhm @ 24A, 10V 2.3V @ 1mA 74nC @ 10V 6200pF @ 10V 4.5V, 10V ±20V
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Vishay Siliconix MOSFET N-CH 20V 60A POLARPAK TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 20V 60A (Tc) 1.17 mOhm @ 20A, 10V 2.2V @ 250µA 145nC @ 10V 6200pF @ 10V 4.5V, 10V ±20V
SIE874DF-T1-GE3
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Vishay Siliconix MOSFET N-CH 20V 60A POLARPAK TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 20V 60A (Tc) 1.17 mOhm @ 20A, 10V 2.2V @ 250µA 145nC @ 10V 6200pF @ 10V 4.5V, 10V ±20V
SIE874DF-T1-GE3
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Vishay Siliconix MOSFET N-CH 20V 60A POLARPAK TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel - 20V 60A (Tc) 1.17 mOhm @ 20A, 10V 2.2V @ 250µA 145nC @ 10V 6200pF @ 10V 4.5V, 10V ±20V