Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDPF12N60NZ
RFQ
VIEW
RFQ
1,053
In-stock
ON Semiconductor MOSFET N-CH 600V TO-220F-3 UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 39W (Tc) N-Channel - 600V 12A (Tc) 650 mOhm @ 6A, 10V 5V @ 250µA 34nC @ 10V 1676pF @ 25V 10V ±30V
FDP12N60NZ
RFQ
VIEW
RFQ
3,651
In-stock
ON Semiconductor MOSFET N-CH 600V 12A TO-220 UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 240W (Tc) N-Channel - 600V 12A (Tc) 650 mOhm @ 6A, 10V 5V @ 250µA 34nC @ 10V 1676pF @ 25V 10V ±30V