Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFH5106TRPBF
RFQ
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RFQ
3,903
In-stock
Infineon Technologies MOSFET N-CH 60V 21A 8-PQFN HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 60V 21A (Ta), 100A (Tc) 5.6 mOhm @ 50A, 10V 4V @ 250µA 75nC @ 10V 3090pF @ 25V 10V ±20V
IRFH5106TR2PBF
RFQ
VIEW
RFQ
880
In-stock
Infineon Technologies MOSFET N-CH 60V 100A 5X6 PQFN HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 60V 21A (Ta), 100A (Tc) 5.6 mOhm @ 50A, 10V 4V @ 250µA 75nC @ 10V 3090pF @ 25V 10V ±20V
IRFH5106TR2PBF
RFQ
VIEW
RFQ
1,827
In-stock
Infineon Technologies MOSFET N-CH 60V 100A 5X6 PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 114W (Tc) N-Channel - 60V 21A (Ta), 100A (Tc) 5.6 mOhm @ 50A, 10V 4V @ 250µA 75nC @ 10V 3090pF @ 25V 10V ±20V
IXTH1N170DHV
RFQ
VIEW
RFQ
3,420
In-stock
IXYS MOSFET N-CH - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant TO-247HV 290W (Tc) N-Channel Depletion Mode 1700V 1A (Tj) 16 Ohm @ 500mA, 0V 4.5V @ 250µA 47nC @ 5V 3090pF @ 25V 0V ±20V
IXTA1N170DHV
RFQ
VIEW
RFQ
3,193
In-stock
IXYS MOSFET N-CH 1700V 1A TO-263 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 290W (Tc) N-Channel Depletion Mode 1700V 1A (Tc) 16 Ohm @ 500mA, 0V - 47nC @ 5V 3090pF @ 25V 10V ±20V
IXTQ48N20T
RFQ
VIEW
RFQ
2,202
In-stock
IXYS MOSFET N-CH 200V 48A TO-3P Trench™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 250W (Tc) N-Channel - 200V 48A (Tc) 50 mOhm @ 24A, 10V 4.5V @ 250µA 60nC @ 10V 3090pF @ 25V 10V ±30V
IXTA48N20T
RFQ
VIEW
RFQ
3,559
In-stock
IXYS MOSFET N-CH 200V 48A TO-263 Trench™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 250W (Tc) N-Channel - 200V 48A (Tc) 50 mOhm @ 24A, 10V 4.5V @ 250µA 60nC @ 10V 3090pF @ 25V 10V ±30V