Operating Temperature :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
NP83P06PDG-E1-AY
RFQ
VIEW
RFQ
1,467
In-stock
Renesas Electronics America MOSFET P-CH 60V 83A TO-263 - Obsolete Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 1.8W (Ta), 150W (Tc) P-Channel 60V 83A (Tc) 8.8 mOhm @ 41.5A, 10V 2.5V @ 1mA 190nC @ 10V 10100pF @ 10V 4.5V, 10V ±20V
NP83P06PDG-E1-AY
RFQ
VIEW
RFQ
3,465
In-stock
Renesas Electronics America MOSFET P-CH 60V 83A TO-263 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 1.8W (Ta), 150W (Tc) P-Channel 60V 83A (Tc) 8.8 mOhm @ 41.5A, 10V 2.5V @ 1mA 190nC @ 10V 10100pF @ 10V 4.5V, 10V ±20V
NP83P06PDG-E1-AY
RFQ
VIEW
RFQ
3,952
In-stock
Renesas Electronics America MOSFET P-CH 60V 83A TO-263 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 1.8W (Ta), 150W (Tc) P-Channel 60V 83A (Tc) 8.8 mOhm @ 41.5A, 10V 2.5V @ 1mA 190nC @ 10V 10100pF @ 10V 4.5V, 10V ±20V
Default Photo
RFQ
VIEW
RFQ
696
In-stock
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSVIII-H Active - MOSFET (Metal Oxide) 175°C Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220SM(W) 375W (Tc) N-Channel 100V 160A (Ta) 2.4 mOhm @ 80A, 10V 3.5V @ 1mA 122nC @ 10V 10100pF @ 10V 6V, 10V ±20V