Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FCP190N60E
RFQ
VIEW
RFQ
1,344
In-stock
ON Semiconductor MOSFET N-CH 600V TO220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 208W (Tc) N-Channel - 600V 20.6A (Tc) 190 mOhm @ 10A, 10V 3.5V @ 250µA 82nC @ 10V 3175pF @ 25V 10V ±20V
FCPF190N60E
RFQ
VIEW
RFQ
3,910
In-stock
ON Semiconductor MOSFET N-CH 600V TO-220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 39W (Tc) N-Channel - 600V 20.6A (Tc) 190 mOhm @ 10A, 10V 3.5V @ 250µA 82nC @ 10V 3175pF @ 25V 10V ±20V