Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPP120N10S405AKSA1
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Infineon Technologies MOSFET N-CH TO220-3 Automotive, AEC-Q101, OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 190W (Tc) N-Channel - 100V 120A (Tc) 5.3 mOhm @ 100A, 10V 3.5V @ 120µA 91nC @ 10V 6540pF @ 25V 10V ±20V
IPI120N10S405AKSA1
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Infineon Technologies MOSFET N-CH TO262-3 Automotive, AEC-Q101, OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 190W (Tc) N-Channel - 100V 120A (Tc) 5.3 mOhm @ 100A, 10V 3.5V @ 120µA 91nC @ 10V 6540pF @ 25V 10V ±20V
IPB120N10S405ATMA1
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Infineon Technologies MOSFET N-CH TO263-3 Automotive, AEC-Q101, OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 190W (Tc) N-Channel - 100V 120A (Tc) 5 mOhm @ 100A, 10V 3.5V @ 120µA 91nC @ 10V 6540pF @ 25V 10V ±20V