Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPP80N06S209AKSA1
RFQ
VIEW
RFQ
3,398
In-stock
Infineon Technologies MOSFET N-CH 55V 80A TO220-3 OptiMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 190W (Tc) N-Channel 55V 80A (Tc) 9.1 mOhm @ 50A, 10V 4V @ 125µA 80nC @ 10V 2360pF @ 25V 10V ±20V
IPB80N06S209ATMA1
RFQ
VIEW
RFQ
996
In-stock
Infineon Technologies MOSFET N-CH 55V 80A TO263-3 OptiMOS™ Discontinued at Digi-Key Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 190W (Tc) N-Channel 55V 80A (Tc) 8.8 mOhm @ 50A, 10V 4V @ 125µA 80nC @ 10V 2360pF @ 25V 10V ±20V
SQM25N15-52_GE3
RFQ
VIEW
RFQ
1,278
In-stock
Vishay Siliconix MOSFET N-CH 150V 25A TO263 Automotive, AEC-Q101, TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 107W (Tc) N-Channel 150V 25A (Tc) 52 mOhm @ 15A, 10V 4V @ 250µA 51nC @ 10V 2360pF @ 25V 10V ±20V
IPB80N06S209ATMA2
RFQ
VIEW
RFQ
3,703
In-stock
Infineon Technologies MOSFET N-CH 55V 80A TO263-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 190W (Tc) N-Channel 55V 80A (Tc) 8.8 mOhm @ 50A, 10V 4V @ 125µA 80nC @ 10V 2360pF @ 25V 10V ±20V
IPB80N06S209ATMA2
RFQ
VIEW
RFQ
1,342
In-stock
Infineon Technologies MOSFET N-CH 55V 80A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 190W (Tc) N-Channel 55V 80A (Tc) 8.8 mOhm @ 50A, 10V 4V @ 125µA 80nC @ 10V 2360pF @ 25V 10V ±20V
IPB80N06S209ATMA2
RFQ
VIEW
RFQ
3,361
In-stock
Infineon Technologies MOSFET N-CH 55V 80A TO263-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 190W (Tc) N-Channel 55V 80A (Tc) 8.8 mOhm @ 50A, 10V 4V @ 125µA 80nC @ 10V 2360pF @ 25V 10V ±20V
IPP80N06S209AKSA2
RFQ
VIEW
RFQ
3,330
In-stock
Infineon Technologies MOSFET N-CH 55V 80A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 190W (Tc) N-Channel 55V 80A (Tc) 9.1 mOhm @ 50A, 10V 4V @ 125µA 80nC @ 10V 2360pF @ 25V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
1,821
In-stock
Vishay Siliconix MOSFET N-CH 150V 25A TO220AB Automotive, AEC-Q101, TrenchFET® Active - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 107W (Tc) N-Channel 150V 25A (Tc) 52 mOhm @ 15A, 10V 4V @ 250µA 60nC @ 10V 2360pF @ 25V 10V ±20V