Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
DMP2010UFG-13
RFQ
VIEW
RFQ
920
In-stock
Diodes Incorporated MOSFET P-CH 20V 12.7A PWRDI3333 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 900mW (Ta) P-Channel 20V 12.7A (Ta), 42A (Tc) 9.5 mOhm @ 3.6A, 4.5V 1.2V @ 250µA 103nC @ 10V 3350pF @ 10V 2.5V, 4.5V ±10V
Default Photo
RFQ
VIEW
RFQ
3,575
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 45A TO220FL - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3, Short Tab TO-220FL 100W (Tc) N-Channel 60V 45A (Ta) 17 mOhm @ 25A, 10V 2V @ 1mA 110nC @ 10V 3350pF @ 10V 4V, 10V ±20V
Default Photo
RFQ
VIEW
RFQ
3,311
In-stock
Diodes Incorporated MOSFET P-CH 20V 50A POWERDI3333 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerDI3333-8 2W (Ta) P-Channel 20V 50A (Tc) 9.5 mOhm @ 3.6A, 4.5V 1.2V @ 250µA 103nC @ 10V 3350pF @ 10V 2.5V, 4.5V ±10V
Default Photo
RFQ
VIEW
RFQ
3,764
In-stock
Diodes Incorporated MOSFET P-CH 20V 50A POWERDI3333 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerDI3333-8 2W (Ta) P-Channel 20V 50A (Tc) 9.5 mOhm @ 3.6A, 4.5V 1.2V @ 250µA 103nC @ 10V 3350pF @ 10V 2.5V, 4.5V ±10V
DMP2010UFG-7
RFQ
VIEW
RFQ
1,560
In-stock
Diodes Incorporated MOSFET P-CH 20V 12.7A PWRDI3333 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 900mW (Ta) P-Channel 20V 12.7A (Ta), 42A (Tc) 9.5 mOhm @ 3.6A, 4.5V 1.2V @ 250µA 103nC @ 10V 3350pF @ 10V 2.5V, 4.5V ±10V
DMP2010UFG-7
RFQ
VIEW
RFQ
1,385
In-stock
Diodes Incorporated MOSFET P-CH 20V 12.7A PWRDI3333 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 900mW (Ta) P-Channel 20V 12.7A (Ta), 42A (Tc) 9.5 mOhm @ 3.6A, 4.5V 1.2V @ 250µA 103nC @ 10V 3350pF @ 10V 2.5V, 4.5V ±10V
DMP2010UFG-7
RFQ
VIEW
RFQ
2,151
In-stock
Diodes Incorporated MOSFET P-CH 20V 12.7A PWRDI3333 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 900mW (Ta) P-Channel 20V 12.7A (Ta), 42A (Tc) 9.5 mOhm @ 3.6A, 4.5V 1.2V @ 250µA 103nC @ 10V 3350pF @ 10V 2.5V, 4.5V ±10V