Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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APT58M80J
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Microsemi Corporation MOSFET N-CH 800V 58A SOT-227 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 960W (Tc) N-Channel - 800V 60W (Tc) 110 mOhm @ 43A, 10V 5V @ 5mA 570nC @ 10V 17550pF @ 25V 10V ±30V
APT53F80J
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Microsemi Corporation MOSFET N-CH 800V 57A SOT-227 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 960W (Tc) N-Channel - 800V 57A (Tc) 110 mOhm @ 43A, 10V 5V @ 5mA 570nC @ 10V 17550pF @ 25V 10V ±30V