Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PHP75NQ08T,127
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RFQ
3,856
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NXP USA Inc. MOSFET N-CH 75V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 157W (Tc) N-Channel - 75V 75A (Tc) 13 mOhm @ 25A, 10V 4V @ 1mA 40nC @ 10V 1985pF @ 25V 10V ±20V
IRFZ48VSTRLPBF
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RFQ
3,958
In-stock
Infineon Technologies MOSFET N-CH 60V 72A D2PAK HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 150W (Tc) N-Channel - 60V 72A (Tc) 12 mOhm @ 43A, 10V 4V @ 250µA 110nC @ 10V 1985pF @ 25V 10V ±20V
IRFIZ48VPBF
RFQ
VIEW
RFQ
1,985
In-stock
Infineon Technologies MOSFET N-CH 60V 39A TO220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 43W (Tc) N-Channel - 60V 39A (Tc) 12 mOhm @ 43A, 10V 4V @ 250µA 110nC @ 10V 1985pF @ 25V 10V ±20V
IRFZ48VS
RFQ
VIEW
RFQ
602
In-stock
Infineon Technologies MOSFET N-CH 60V 72A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 150W (Tc) N-Channel - 60V 72A (Tc) 12 mOhm @ 43A, 10V 4V @ 250µA 110nC @ 10V 1985pF @ 25V 10V ±20V
IRFZ48VPBF
RFQ
VIEW
RFQ
3,933
In-stock
Infineon Technologies MOSFET N-CH 60V 72A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel - 60V 72A (Tc) 12 mOhm @ 43A, 10V 4V @ 250µA 110nC @ 10V 1985pF @ 25V 10V ±20V