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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,824
In-stock
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Toshiba Semiconductor and Storage | X34 PB-F SMALL LOW ON RESISTANE | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 600mW (Ta) | P-Channel | - | 30V | 2A (Ta) | 150 mOhm @ 2A, 10V | 2.2V @ 250µA | 3.4nC @ 4.5V | 159pF @ 15V | 4V, 10V | +20V, -25V | |||
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VIEW |
3,603
In-stock
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Toshiba Semiconductor and Storage | X34 PB-F SMALL LOW ON RESISTANE | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 600mW (Ta) | P-Channel | - | 30V | 2A (Ta) | 150 mOhm @ 2A, 10V | 2.2V @ 250µA | 3.4nC @ 4.5V | 159pF @ 15V | 4V, 10V | +20V, -25V | |||
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VIEW |
1,894
In-stock
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Toshiba Semiconductor and Storage | X34 PB-F SMALL LOW ON RESISTANE | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 600mW (Ta) | P-Channel | - | 30V | 2A (Ta) | 150 mOhm @ 2A, 10V | 2.2V @ 250µA | 3.4nC @ 4.5V | 159pF @ 15V | 4V, 10V | +20V, -25V | |||
